EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Nov 16, 2023
app pub date -
Jul 24, 2023
filing date -
Jul 24, 2023
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Abstract
An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
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