SEMICONDUCTOR LASER DEVICE
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United States of America Patent
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Nov 9, 2023
app pub date -
Jan 8, 2021
filing date -
Sep 25, 2020
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Abstract
A semiconductor laser device of the present disclosure includes: a first-conductivity-type cladding layer, a first-conductivity-type-side optical guide layer, an active layer, a second-conductivity-type-side optical guide layer, a second-conductivity-type cladding layer, and a second-conductivity-type contact layer laminated above a semiconductor substrate; a resonator having a front end surface and a rear end surface; and a ridge region for guiding a laser beam between the front and rear end surfaces. The ridge region is composed of a ridge inner region in which an effective refractive index is nai, and ridge outer regions which are provided on both sides of the ridge inner region and in which an effective refractive index is nao, the ridge outer regions having current non-injection structures. A ridge outer region width Wo is greater than a distance from a lower end of each current non-injection structure to the active layer.
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