MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
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United States of America Patent
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Issued Date -
Nov 2, 2023
app pub date -
Jun 27, 2023
filing date -
Dec 27, 2018
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Abstract
A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.
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