PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS

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United States of America Patent

APP PUB NO 20230353115A1
SERIAL NO

18348940

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Abstract

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A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

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Patent Owner(s)

Patent OwnerAddress
SOITEC SILICON ON INSULATORFRENCH BOERNING

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Charles-Alfred, Cèdric Grenoble, FR 1 0
Drouin, Alexis La Buissiere, KR 13 39
Huyet, Isabelle Crolles, FR 9 10
Landru, Didier Le Champ-près-Froges, KR 72 782

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