METHOD OF FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Nov 2, 2023
app pub date -
Jul 4, 2023
filing date -
Oct 29, 2018
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Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.
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