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Abstract

A semiconductor component is provided in the form of an enhancement mode high-electron-mobility transistor having an n-i-p semiconductor junction epitaxial structure. The semiconductor component includes: a channel layer and a barrier layer formed on the channel layer. A two-dimensional electron gas (2DEG) is formed in the channel layer adjacent to an interface between the channel layer and the barrier layer. A gate electrode is disposed on the barrier layer. A semiconductor junction structure is disposed and sandwiched between the gate electrode and the barrier layer. The semiconductor junction structure includes a first region doped with a first dopant and in direct contact with the gate electrode, a second region doped with a second dopant different from the first dopant, and a third region being unintentionally doped and sandwiched between the first region and the second region. The semiconductor junction structure depletes a portion of the 2DEG thereunder.

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