SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS

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United States of America Patent

APP PUB NO 20230349065A1
SERIAL NO

18188177

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Abstract

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There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

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Patent Owner(s)

Patent OwnerAddress
KOKUSAI ELECTRIC CORPORATION3-4 KANDAKAJI-CHO CHIYODA-KU TOKYO 101-0045

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIRANO, Akito Toyama-shi, JP 15 46
KOSHI, Yasunobu Toyama-shi, JP 15 579
MEGAWA, Yasuhiro Toyama-shi, JP 14 49
MIYAKURA, Takahiro Toyama-shi, JP 7 8
MORIYA, Atsushi Toyama-shi, JP 56 1503

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