Importance

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Abstract

The present description concerns a method of manufacturing a microelectromechanical device, including the following successive steps: providing an SOI structure comprising a first semiconductor layer on an insulating layer; forming a second semiconductor layer by epitaxy on top of and in contact with the upper surface of the first semiconductor layer; transferring and bonding, by molecular bonding, a third semiconductor layer onto and in contact with the upper surface of the second semiconductor layer; and forming trenches vertically extending from the upper surface of the third semiconductor layer all the way to the upper surface of the insulating layer, said trenches laterally delimiting a mechanical element of the device.

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First Claim