METHOD FOR CONTACTING A POWER SEMICONDUCTOR ON A SUBSTRATE
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United States of America Patent
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Issued Date -
Oct 26, 2023
app pub date -
Apr 30, 2021
filing date -
Jun 23, 2020
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Abstract
A method for contacting a power semiconductor device on a substrate is disclosed. In order to achieve improved switching behavior and a higher maximum current density, the power semiconductor device has, on a side facing the substrate, at least two contact regions which are electrically isolated from one another, and which are connected by a material bond to the substrate by a structured, in particular metal, connecting layer which includes at least two sintered layers.
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