ELECTRICAL CONTACT ARRANGEMENT, POWER SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING AN ELECTRICAL CONTACT ARRANGEMENT AND METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR MODULE
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United States of America Patent
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Issued Date -
Oct 26, 2023
app pub date -
Nov 23, 2021
filing date -
Nov 23, 2020
priority date (Note) -
Published
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Abstract
An electrical contact arrangement electrically contacts at least two power semiconductor devices, and comprises at least two bond wires and at least three electrical contacts, comprising an alternating current contact, a positive direct current contact, and a negative direct current contact. Each electrical contact comprises a ground potential part; contact part; and insulation part on the ground potential part. The contact part is provided on the insulation part. At least two electrical contacts are separated by a gap between the insulation parts and the gap between the contact parts of the separated electrical contacts. A bond wire connects a first power semiconductor device on a contact part of the positive direct current contact with a contact part of the alternating current contact. A bond wire connects a second power semiconductor device on the contact part of the alternating current contact with a contact part of the negative direct current contact.

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- 15 United States
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- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
HITACHI ENERGY LTD | ZÜRICH |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
LIU, Chunlei | Oberrohrdorf, CH | 50 | 275 |
MOHN, Fabian | Ennetbaden, CH | 22 | 58 |
PUUKKO, Joonas | Tuusula, FI | 6 | 12 |
SCHUDERER, Juergen | Zürich, CH | 13 | 29 |
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