RADIO FREQUENCY (RF) SWITCH WITH DRAIN/SOURCE CONTACTS
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United States of America Patent
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Issued Date -
Oct 19, 2023
app pub date -
Mar 30, 2023
filing date -
Apr 15, 2022
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Abstract
The present disclosure is directed to conductive structures that may be utilized in a radio-frequency (RF) switch. The embodiments of the conductive structures of the present disclosure are formed to balance the “on” resistance (Ron) and the “off” capacitance (Coff) such that the Ron·Coff value is optimized such that the conductive structures are relatively efficient as compared to conventional conductive structures within conventional RF switches. For example, the conductive structures include various metallization layers that are stacked on each other and spaced apart in a selected manner to balance the Ron and the Coff as to optimize the Ron·Coff figure of merit as a lower Ron·Coff is preferred.
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