METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS
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United States of America Patent
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Issued Date -
Oct 19, 2023
app pub date -
Mar 1, 2023
filing date -
Apr 19, 2022
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Abstract
A crack generated on a main surface of a substrate is detected, and the main surface of the substrate is scanned with the laser light in order that a time integral of a light amount of laser light for annealing with which a unit area in a crack region including the detected crack is irradiated is smaller than a time integral of a light amount of the laser light with which a unit area in a region different from the crack region is irradiated, to perform laser annealing treatment on the substrate.
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