Importance

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Abstract

There are provided a phase shift mask blank capable of sufficiently suppressing the generation of a haze on a mask, a phase shift mask with few haze defects, and a method for manufacturing the phase shift mask. A phase shift mask blank (10) according to this embodiment is a phase shift mask blank used for producing a phase shift mask to which an exposure light with a wavelength of 200 nm or less is applied, and the phase shift mask blank (10) includes: a substrate (11); and a phase shift film (14) formed on the substrate (11), in which the phase shift film (14) includes a phase layer (12) capable of adjusting each of the phase and the transmittance by a predetermined amount with respect to a transmitting exposure light and a protective layer (13) formed on the phase layer (12) and preventing gas permeation into the phase layer (12), when the film thickness of the phase layer (12) is defined as d1 and the film thickness of the protective layer (13) is defined as d2, the film thickness (d1) of the phase layer (12) is larger than the film thickness (d2) of the protective layer (13) and the film thickness (d2) of the protective layer (13) is 15 nm or less.

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First Claim