FILM FORMING METHOD AND FILM FORMING APPARATUS
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United States of America Patent
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Oct 12, 2023
app pub date -
Jul 20, 2021
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Jul 31, 2020
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Abstract
A film forming method includes: a supply operation of supplying a processing gas into a processing container in which a substrate is accommodated, the processing gas including a silicon-containing gas, a nitrogen-containing gas, and a diluent gas; and a film forming operation of plasmarizing the processing gas by supplying, into the processing container, power obtained by phase-controlling and superimposing first power with a first frequency in a VHF band and second power with a second frequency different from the first frequency in the VHF band, and forming a silicon nitride film on the substrate by the plasmarized processing gas.
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