Importance

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Abstract

A semiconductor memory device includes conductive layers, a semiconductor layer opposed to the conductive layers, and a gate insulating film disposed therebetween. When positions corresponding to surfaces on one and the other sides of the first conductive layer and an intermediate position thereof are respectively assumed to be a first position to a third position, when positions corresponding to surfaces on one and the other sides of the second conductive layer and an intermediate position thereof are respectively assumed to be a fourth position to a sixth position, and when lengths of the semiconductor layer at the first position to the sixth position are respectively assumed to be a first length to a sixth length, the first length to the third length are smaller than the fourth length to the sixth length, and the third length is smaller than the first length and the second length.

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First Claim