SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20230307346A1
SERIAL NO

18160525

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Abstract

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A method of manufacturing a semiconductor device, includes; preparing an insulated circuit substrate including a circuit layer having a main surface and a side surface inclined to a normal direction of the main surface; irradiating the side surface of the circuit layer with a laser beam so as to roughen at least a part of the side surface of the circuit layer and provide an oxide film on the roughened side surface of the circuit layer; and bonding a semiconductor chip to the main surface of the circuit layer via a solder layer.

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Patent Owner(s)

Patent OwnerAddress
FUJI ELECTRIC CO LTD1-1 TANABESHINDEN KAWASAKI-KU KAWASAKI-SHI KANAGAWA 2109530 ?2109530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HOZUMI, Yasuaki Matsumoto-city, JP 7 33
MOMOSE, Fumihiko Higashi-chikuma-gun, JP 20 59
TAKEISHI, Natsuki Matsumoto-city, JP 1 0
UCHIYAMA, Ryoto Matsumoto-city, JP 1 0

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