EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF

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United States of America Patent

APP PUB NO 20230305381A1
SERIAL NO

17833823

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Abstract

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A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Ya Hui Hsinchu City, TW 54 176
CHENG, Chieh-Jen Hsinchu City, TW 24 182
HSIEH, Ken-Hsien Taipei City, TW 113 1847
LAI, Yu-Tse Zhubei City, TW 12 0
SU, Wei-Shuo Hsinchu City, TW 15 26
WANG, Sheng-Min New Taipei City, TW 18 88

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