Importance

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Abstract

Systems and methods presented herein include efficient and effective Light Emitting Devices (LED) devices. In one embodiment, a light emitting device comprises: a substrate comprising silicon; a first portion comprising a group III-V compound component with a first type of doping; a second portion comprising an active region, a shell comprising a gradient configuration with piezoelectric field compensation characteristics; and a third portion comprising a group III-V compound component with a second type of doping, The silicon substrate is coupled to the first portion. The first portion and shell are coupled to the second portion with is in turn coupled to the third portion. The active region comprises a quantum core structure with strain compensation barriers and polarization doping. The strain compensated barriers form multiple quantum wells. In one embodiment, the strain compensation barriers include AlGaN in a configuration that compensates tensile strain within the active region. The AlGaN can also be configured to induce polarization charges and enhance indium incorporation. In one embodiment, the shell comprises AlGaN with a negative Al composition gradient.

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First Claim