SILICON NITRIDE ETCHING COMPOSITION AND METHOD

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United States of America Patent

APP PUB NO 20230295502A1
SERIAL NO

18201363

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

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Patent Owner(s)

Patent OwnerAddress
ENTEGRIS INCMASSACHUSETTS MASSACHUSETTS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BILODEAU, Steven Michael Fairfield, US 2 0
COOPER, Emanuel I Scarsdale, US 71 1001
HONG, SeongJin Cheongju-si, KR 15 22
WU, Hsing-Chen Hsinchu City, TW 12 61
YANG, Min-Chieh Hsinchu City, TW 33 220

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