MANUFACTURING METHOD FOR NONVOLATILE CHARGE-TRAPPING MEMORY APPARATUS
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United States of America Patent
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Sep 14, 2023
app pub date -
Mar 10, 2023
filing date -
Mar 10, 2023
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Abstract
A manufacturing method for a nonvolatile charge-trapping memory apparatus is provided. During the manufacturing process of the nonvolatile memory apparatus, a blocking layer of a storage device is effectively protected. Consequently, the blocking layer is not contaminated or thinned. Moreover, since the well regions of the logic device area and the memory device area are not simultaneously fabricated, it is feasible to fabricate small-sized nonvolatile memory cell in the memory device area and precisely control the threshold voltage of the charge trapping transistor.
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