Bipolar transistor structures with base having varying horizontal width and methods to form same
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United States of America Patent
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Feb 27, 2024
Grant Date -
Sep 14, 2023
app pub date -
May 26, 2022
filing date -
May 26, 2022
priority date (Note) -
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Abstract
Embodiments of the disclosure provide a bipolar transistor structure having a base with a varying horizontal width and methods to form the same. The bipolar transistor structure includes a first emitter/collector (E/C) layer on an insulator layer. A base layer is over the insulator layer. A spacer between the first E/C layer and the base layer. The base layer includes a lower base region, and the spacer is adjacent to the lower base region and the first E/C layer. An upper base region is on the lower base region and the spacer. A horizontal width of the upper base region is larger than a horizontal width of the lower base region.
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