ELECTRONIC DEVICE INCLUDING A SEMICONDUCTOR LAYER WITHIN A TRENCH AND A SEMICONDUCTOR LAYER AND A PROCESS OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Sep 7, 2023
app pub date -
Jan 28, 2022
filing date -
Jan 28, 2022
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Abstract
In an aspect, a process of forming an electronic device can include patterning a substrate to define a trench having a sidewall and forming a first semiconductor layer within the trench and along the sidewall. In an embodiment, the process can further include forming a barrier layer within the trench after forming the first semiconductor layer; forming a second semiconductor layer within the trench after forming the barrier layer, wherein within the trench, first and second portions of the second semiconductor layer contact each other adjacent to a vertical centerline of the trench; and exposing the second semiconductor layer to radiation sufficient to allow a void within second semiconductor layer to migrate toward the barrier layer. In another embodiment, after forming a semiconductor within the trench, the process can further include forming an insulating layer that substantially fills a remaining portion of the trench.
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