METHOD OF FORMING AMORPHOUS TITANIUM DIOXIDE THIN FILM USING LOW TEMPERATURE ATOMIC LAYER DEPOSITION METHOD AND METHOD OF FABRICATING OPTICAL STRUCTURE
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United States of America Patent
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Issued Date -
Sep 7, 2023
app pub date -
Mar 3, 2023
filing date -
Mar 3, 2022
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Abstract
Provided is a method of forming an amorphous titanium dioxide (TiO2) thin film on a substrate using a low temperature atomic layer deposition method, the method of forming an amorphous TiO2 thin film including supplying a titanium (Ti) precursor to the substrate provided in a process chamber to adsorb the Ti precursor on the substrate, forming a Ti precursor film on the substrate by exposing the Ti precursor to the substrate where the Ti precursor is not adsorbed, supplying an oxygen (O2) precursor to the Ti precursor film and reacting the O2 precursor with the Ti precursor film, and forming the TiO2 thin film on the substrate by exposing the O2 precursor to the Ti precursor film that has not reacted with the O2 precursor, and reacting the Ti precursor film with the O2 precursor.
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