SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
Aug 24, 2023
app pub date -
Feb 23, 2022
filing date -
Feb 23, 2022
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Abstract
A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.
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