SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
Aug 17, 2023
app pub date -
Apr 13, 2022
filing date -
Feb 17, 2022
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Abstract
A semiconductor structure includes a substrate, a first dielectric layer on the substrate, a second dielectric layer on the first dielectric layer, and an interconnection structure on the second dielectric layer. The interconnection structure includes at least two lateral extending portions on the second dielectric layer, and a U-shaped portion through the second dielectric layer and a portion of the first dielectric layer and connected between adjacent ends of the two lateral extending portions.
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