Importance

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Abstract

A semiconductor light-emitting element includes a substrate having a first surface, a plurality of protrusions disposed, with spacing opened between one another, on the first surface, a buffer layer disposed to cover the plurality of protrusions and the first surface positioned between the plurality of protrusions, a dimension of the buffer layer in a first direction orthogonal to the first surface being smaller than a dimension in the first direction of each of the plurality of protrusions, an n-type semiconductor layer that is disposed on the buffer layer and is doped with an n-type impurity, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer that is disposed on the active layer and is doped with a p-type impurity.

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First Claim