SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 10, 2023
app pub date -
Apr 14, 2023
filing date -
Oct 1, 2018
priority date (Note) -
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.
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