Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 12125750
APP PUB NO 20230238283A1
SERIAL NO

18118505

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Abstract

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A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction. The semiconductor device includes a first gate structure on a substrate, the first gate structure extending lengthwise in a first direction to have two long sides and two short sides, relative to each other, and including a first gate spacer; a second gate structure on the substrate, the second gate structure extending lengthwise in the first direction to have two long sides and two short sides, relative to each other, and including a second gate spacer, wherein a first short side of the second gate structure faces a first short side of the first gate structure; and a gate insulating support disposed between the first short side of the first gate structure and the first short side of the second gate structure and extending lengthwise in a second direction different from the first direction, a length of the gate insulating support in the second direction being greater than a width of each of the first gate structure and the second gate structure in the second direction.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Seung Soo Incheon, KR 26 114
Lee, Jeong Yun Yongin-si, KR 40 249
Lee, Sang Hyun Hwaseong-si, KR 269 1466
Oh, Young Mook Hwaseong-si, KR 13 171
Park, Seung Ju Hwaseong-si, KR 9 108
Seong, Geum Jung Seoul, KR 13 83

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