STANDARD SAMPLE AND MANUFACTURING METHOD THEREOF

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United States of America Patent

APP PUB NO 20230228792A1
SERIAL NO

17998324

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A substrate (101) is etched by etching processing with crystal anisotropy, thereby forming a recess (104) from the main surface of the substrate (101) to the inside of the substrate (101). A side surface (105) is almost a (111) plane, and the etching hardly progresses. As a result, a cross section of the recess (104) perpendicular to the longitudinal direction has a rectangular shape. Since an opening (103) of a mask pattern (102) has a rectangular shape in a planar view, the opening of the recess (104) has a rectangular shape in a planar view, and the recess (104) is formed into, for example, a rectangular parallelepiped shape. The recess (104) includes a side surface (105) that forms one plane perpendicular to the main surface of the substrate (101). The side surface (105) is a facet surface and is a tilting surface tilted from the (111) plane.

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Patent Owner(s)

Patent OwnerAddress
NTT ADVANCED TECHNOLOGY CORPORATIONTOKYO 163-1436

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KODAIRA, Akira Tokyo, JP 1 0
MARUYAMA, Takashi Tokyo, JP 195 2178
OKU, Satoshi Tokyo, JP 15 85

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