Importance

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Abstract

A semiconductor device includes a substrate including first and second active regions; a bitline structure extending in one direction on the substrate, the bitline structure being electrically connected to the first active region; a storage node contact on a sidewall of the bitline structure, the storage node contact being electrically connected to the second active region; a spacer structure between the bitline structure and the storage node contact; a landing pad on the storage node contact, the landing pad being in contact with a sidewall of the spacer structure; and a capacitor structure electrically connected to the landing pad, wherein the spacer structure includes a first spacer, a second spacer, a third spacer, and a fourth spacer, sequentially stacked on the sidewall of the bitline structure, the second spacer is an air spacer, and the third spacer has a thickness that is less than a thickness of the first spacer.

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First Claim