METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE PROVIDED WITH PIEZOELECTRIC SINGLE CRYSTAL FILM
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United States of America Patent
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Issued Date -
Jul 6, 2023
app pub date -
Apr 28, 2021
filing date -
May 8, 2020
priority date (Note) -
Published
status (Latency Note)
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Abstract
Provided is a method of manufacturing a composite substrate equipped with a piezoelectric single-crystal film having good film-thickness uniformity and not causing deterioration in properties even if ion implantation is performed. The method of manufacturing a composite substrate 10 equipped with a piezoelectric single-crystal film 11 according to the present invention includes the steps of: (a) subjecting a piezoelectric single-crystal substrate 1 made of lithium tantalate or lithium niobate to ion implantation treatment to form an ion implantation layer 11, (c) bonding the surface of the piezoelectric single-crystal substrate 1 having the ion implantation layer 11 thereon to a temporary bonding substrate 2, (d) separating the piezoelectric single-crystal substrate 1 into the ion implantation layer 11 and the remaining portion of the substrate to form a piezoelectric single-crystal film 11 on the temporary bonding substrate 2, (f) bonding a supporting substrate 3 to the surface of the piezoelectric single-crystal film 11 opposite to a bonded surface of the temporary bonding substrate, and (g) separating the temporary bonding substrate from the piezoelectric single-crystal film 11.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SHIN-ETSU CHEMICAL CO LTD | TOKYO JAPAN TOKYO METROPOLIS |
International Classification(s)

- 2021 Application Filing Year
- H03H Class
- 1034 Applications Filed
- 655 Patents Issued To-Date
- 63.35 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
NAGATA, Kazutoshi | Annaka-shi, Gunma, JP | 19 | 36 |
# of filed Patents : 19 Total Citations : 36 |
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- 0 Citation Count
- H03H Class
- 0 % this patent is cited more than
- 2 Age
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