ELECTRONICALLY-TUNABLE, AIR-STABLE, NEGATIVE ELECTRON AFFINITY SEMICONDUCTOR PHOTOCATHODE
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United States of America Patent
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Issued Date -
Jul 6, 2023
app pub date -
Sep 8, 2022
filing date -
Sep 8, 2021
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Abstract
A HELAC device includes a semiconductor layer that absorbs incident photons, a graphene monolayer disposed over the semiconductor layer, and an insulator layer interposed between the semiconductor layer and graphene monolayer. The graphene monolayer is configured as a gate for the HELAC device while the insulator layer is configured to allow a voltage drop between the semiconductor layer and graphene. Advantageously, the HELAC device is configured to receive photons on an emitter surface and to emit hot electrons therefrom.
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