Semiconductor devices
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United States of America Patent
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Sep 24, 2024
Grant Date -
Jun 29, 2023
app pub date -
Mar 1, 2023
filing date -
Mar 14, 2018
priority date (Note) -
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Abstract
A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
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