Integrated Assemblies Having Shield Lines Between Neighboring Transistor Active Regions
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United States of America Patent
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Issued Date -
Jun 29, 2023
app pub date -
Feb 27, 2023
filing date -
Oct 29, 2019
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Abstract
Some embodiments include an integrated assembly having digit lines supported by a base and extending along a first direction. A shield-connection-line is supported by the base and extends along the first direction. Transistor active regions are over the digit lines. Each of the active regions includes a channel region between an upper source/drain region and a lower source/drain region. The lower source/drain regions are coupled with the digit lines. Capacitors are coupled with the upper source/drain regions. Wordlines extend along a second direction which crosses the first direction. The wordlines include gate regions adjacent the channel regions. Shield lines extend along the second direction. The shield lines are above the digit lines and are coupled with the shield-connection-line.
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