METHOD FOR FABRICATION OF HALIDE PEROVSKITE SINGLE CRYSTAL COMPRISING LOW-TEMPERATURE SOLVATION PROCESS

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United States of America Patent

APP PUB NO 20230203703A1
SERIAL NO

18176505

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The present disclosure relates to a method of preparing a halide perovskite single crystal, including a process of enhancing a solubility of a precursor by using a low-temperature solvent.

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Patent OwnerAddress
EWHA UNIVERSITY-INDUSTRY COLLABORATION FOUNDATION52 EWHAYEODAE-GIL SEODAEMUN-GU SEOUL 120-750

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHO, Yun Ae Namyangju-si, KR 2 0
JO, William Seoul, KR 10 24
JUNG, Hye Ri Pohang-si, KR 18 61

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