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United States of America Patent

APP PUB NO 20230203642A1
SERIAL NO

18008459

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Abstract

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Nanoclusters are produced in a gas phase using a nanocluster manufacturing section including: a vacuum container; a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma; a pulse power source that supplies pulsed power to the sputtering source; a first inert gas supply section that supplies a first inert gas to the sputtering source; a nanocluster growth cell that is contained in the vacuum container; and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell. A multitude of supports are rolled in the gas phase and each of the supports is sprinkled with a multitude of nanoclusters to cause each support to support the multitude of nanoclusters.

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Patent Owner(s)

Patent OwnerAddress
KEIO UNIVERSITYTOKYO 108-8345
NATIONAL INSTITUTE FOR MATERIALS SCIENCETSUKUBA-SHI IBARAKI 305-0047
IBARAKI UNIVERSITYIBARAKI 310-8512
AYABO CORPORATION97-1 AKAGO YOKOYAMA-CHO ANJO-SHI AICHI 446-0045

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ANDO, Toshihiro Tsukuba-shi, JP 17 193
GUNJI, Hiroyuki Hitachi-shi, JP 13 68
HIRATA, Naoyuki Anjo-shi, Aichi, JP 1 0
NAKAJIMA, Atsushi Yokohama-shi,, JP 145 1527
TONA, Masahide Anjo-shi, Aichi, JP 3 4
TSUKAMOTO, Keizo Anjo-shi, Aichi, JP 7 5
TSUNOYAMA, Hironori Yokohama-shi,, JP 3 1
UNO, Mika Hitachi-shi, JP 2 3

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