Ferroelectric Device

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United States of America Patent

APP PUB NO 20230200078A1
SERIAL NO

18065335

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Abstract

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Example embodiments relate to ferroelectric devices. An example ferroelectric device layer structure includes a first electrode. The ferroelectric device layer structure also includes a second electrode. Additionally, the ferroelectric device layer structure includes a ferroelectric layer of hafnium zirconate (HZO). Further, the ferroelectric device layer structure includes an oxide layer of Nb2O5 or Ta2O5 arranged on the ferroelectric layer. The ferroelectric layer and the oxide layer are arranged between the first electrode and the second electrode.

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Patent Owner(s)

Patent OwnerAddress
IMEC VZWLEUVEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bizindavyi, Jasper Leuven, BE 3 0
Kar, Gouri Sankar Leuven, BE 26 167
Popovici, Mihaela Ioana Haasrode, BE 16 45
Van, Houdt Jan Bekkevoort, BE 31 448
Walke, Amey Mahadev Heverlee, BE 16 42

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