POWER SEMICONDUCTOR DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20230197578A1
SERIAL NO

17667558

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A power semiconductor device, including a terminal base, is provided. The terminal base has a first end and a second end opposite to each other. The first end has a first flange expanding outward. The first flange is welded to a pad of a substrate by a solder. An included angle between an extension direction of the first flange and a length direction of the terminal base is greater than 90 degrees.

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Patent Owner(s)

Patent OwnerAddress
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTENO 195 SEC 4 CHUNG HSING RD CHUTUNG HSINCHU 31040

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Jing-Yao New Taipei City, TW 23 153
Kao, Kuo-Shu New Taipei City, TW 17 36
Lee, Tai-Kuang Taoyuan City, TW 3 1
Wu, Han-Lin Hsinchu City, TW 34 52
Wu, Sheng-Tsai Taoyuan City, TW 18 56
Yu, Tai-Jyun Taoyuan City, TW 7 8

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