METHOD FOR EVALUATING PERIPHERAL STRAIN OF WAFER
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United States of America Patent
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Jun 22, 2023
app pub date -
Jun 1, 2020
filing date -
Jun 1, 2020
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Abstract
A method for evaluating a peripheral strain of a wafer having a polycrystalline film formed on a surface, the method including: using, as the wafer having the polycrystalline film formed on the surface, a wafer of a silicon single crystal substrate having a polycrystalline film formed on a surface; performing a pre-treatment of removing a surface of the polycrystalline film; subsequently allowing an infrared laser to enter a periphery of the wafer from a back surface; and evaluating the peripheral strain of the wafer from a polarization degree of the infrared laser transmitted through the wafer.
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