MICROCHIP CHARGE PATTERNING

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United States of America Patent

APP PUB NO 20230187373A1
SERIAL NO

18164070

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of forming a charge pattern on a microchip includes depositing a first material on an insulator surface of the microchip, depositing a material having capability of forming a self-assembled monolayer on the other material, wherein the material comprises at least one material selected from the group consisting of: octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilanem, and patterning the self-assembled monolayer to reveal a portion of the first material. A method of forming a charge pattern in a microchip includes depositing a first material as one of either a solution processed material or a vapor deposited material to generate a first polarity or first magnitude of charge, depositing a second material as a vapor deposited material to generate a second polarity or second magnitude of charge, and immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane.

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Patent Owner(s)

Patent OwnerAddress
XEROX CORPORATION45 GLOVER AVENUE P O BOX 4505 NORWALK CT 06856-4505

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chow, Eugene M Fremont, US 121 1022
Doris, Sean E San Francisco, US 16 39
Hsieh, Bing R Pleasanton, US 88 1345
Lu, JenPing Fremont, US 3 0
Volkel, Armin R Mountain View, US 114 2039
Whiting, Gregory L Menlo Park, US 34 309

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