HARDMASK STRUCTURE FOR PREPARING SEMICONDUCTOR STRUCTURE
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United States of America Patent
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Jun 15, 2023
app pub date -
Dec 10, 2021
filing date -
Dec 10, 2021
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Abstract
The present disclosure provides a hardmask structure for preparing a semiconductor structure. The hardmask structure includes a first ashable hardmask layer, a first anti-reflection coating, and a second ashable hardmask layer. The first anti-reflection coating is disposed on the first ashable hardmask layer. The second ashable hardmask layer is disposed on the first anti-reflection coating. A modulus of the first ashable hardmask layer is greater than a modulus of the second ashable hardmask layer.
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