METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jun 1, 2023
app pub date -
Nov 11, 2022
filing date -
Nov 26, 2021
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Abstract
A method for manufacturing a semiconductor device includes: preparing a semiconductor substrate; arranging a mask on one surface of the semiconductor substrate; forming opening portions in the mask by patterning so as to expose planned formation regions of the semiconductor substrate where trenches are to be formed; forming the trenches, which extend in a longitudinal direction along a planar direction of the semiconductor substrate, in the semiconductor substrate adjacent to the one surface, by performing a first etching using the mask; forming a rounded portion at an opening end portion of each of the trenches by performing a second etching in a state where the mask is arranged and under a condition that a selectivity of the mask is higher than that of the semiconductor substrate; and arranging a gate insulating film and a gate electrode in each of the trenches, thereby to form trench gate structures.
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