Flexible transistors with near-junction heat dissipation
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United States of America Patent
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May 28, 2024
Grant Date -
Jun 1, 2023
app pub date -
Oct 6, 2022
filing date -
Apr 30, 2020
priority date (Note) -
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Abstract
Flexible transistors and electronic circuits incorporating the transistors are provided. The flexible transistors promote heat dissipation from the active regions of the transistors while preserving their mechanical flexibility and high-frequency performance. The transistor designs utilize thru-substrate vias (TSVs) beneath the active regions of thin-film type transistors on thin flexible substrates. To promote rapid heat dissipation, the TSVs are coated with a material having a high thermal conductivity that transfers heat from the active region of the transistor to a large-area ground.
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