SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

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United States of America Patent

APP PUB NO 20230155015A1
SERIAL NO

17933745

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Abstract

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Provided is a semiconductor device that carries current in both directions and that enables accurate detection of current flowing through the semiconductor device. The semiconductor device includes a transistor and a diode both formed in a common semiconductor base body. The semiconductor device includes: a first main surface; a second main surface; a first electrode; a second electrode; a third electrode for current sensing; and a fourth electrode for current sensing. The semiconductor base body includes: a transistor region in which the transistor is formed; a diode region in which the diode is formed; and a separation region formed between the transistor region and the diode region. The third electrode is provided on the first main surface in the transistor region at a distance from the first electrode. The fourth electrode is provided on the first main surface in the diode region at a distance from the first electrode.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATION7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008310 ?1008310

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SATO, Katsumi Tokyo, JP 62 573

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