MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
May 11, 2023
app pub date -
Nov 2, 2022
filing date -
Nov 8, 2021
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Abstract
A memory device and a method of manufacturing the same are provided. The memory device includes a substrate, a memory cell array, and a memory cell interconnection structure. The memory cell array is disposed on the substrate and includes a plurality of memory cells. Each of the plurality of memory cells includes a transistor unit and a memory unit that are electrically connected to each other. The memory cell interconnection structure is disposed on the substrate, and is configured to establish an electrical connection between the plurality of memory cells. A plurality of source lines are embedded in a dielectric layer that directly covers the substrate. Each of the plurality of source lines is disposed on the substrate, and comes in direct contact with a source region of a corresponding one of the transistor units.
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