Importance

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Abstract

A memory device and a method of manufacturing the same are provided. The memory device includes a substrate, a memory cell array, and a memory cell interconnection structure. The memory cell array is disposed on the substrate. Each memory cell in the memory cell array includes a transistor unit and a memory unit that are electrically connected to each other. The memory cell interconnection structure is configured to establish an electrical connection between the memory cells, and includes a dielectric layer and a plurality of drain conductive structures. At least one drain conductive pillar includes a first contact portion and a second contact portion that are connected to each other and embedded in the dielectric layer. One side surface of the first contact portion is recessed along a first direction with respect to one side surface of the second contact portion, so as to form a stepped structure.

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First Claim