METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 23, 2023
app pub date -
Sep 20, 2022
filing date -
Sep 21, 2021
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Abstract
Methods for manufacturing memory resistor devices and memory resistor devices manufactured according to such methods. A method includes depositing a first layer of dielectric material onto a substrate comprising a first electrode; bombarding the deposited first layer with an ion beam to create one or more defects in the first layer; depositing a second electrode such that the deposited first layer is between the first electrode and the second electrode; electroforming the first layer by applying an electroforming voltage between the first electrode and the second electrode.
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