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Abstract

A method for manufacturing predominantly amorphous silicon-containing particles includes a chemical compound of formula: Si_(1−x)C_x, where 0.005≤x<0.05. The particles, when subjected to XRD analysis applying unmonochromated CuKα radiation, exhibit one peak at around 28° and one peak at around 52°. Both peaks have a Full Width at Half Maximum of at least 5° when using Gaussian peak fitting. The method includes forming a homogeneous gas mixture of a first precursor gas of a silicon containing compound and at least one second precursor gas of a substitution element M containing compound, injecting the homogeneous gas mixture of the first and second precursor gases into a reactor space where the precursor gases are heated to a temperature in the range of from 700 to 900° C. so that the precursor gases react and form particles, and collecting and cooling the particles to a temperature in the range of from ambient temperature up to about 350° C. The relative amounts of the first and the second precursor gases are adapted such that the formed particles obtain an atomic ratio C: Si in the range of [0.005, 0.05).

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First Claim