PASSIVATED CONTACT SOLAR CELL AND FABRICATION METHOD FOR BACK PASSIVATION ASSEMBLY THEREOF
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United States of America Patent
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Issued Date -
Mar 9, 2023
app pub date -
Nov 26, 2021
filing date -
Sep 7, 2021
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Abstract
A passivated contact solar cell includes a silicon substrate and a back passivation assembly which includes a tunnel oxide layer, an N-type doped polysilicon film and a cover layer. The tunnel oxide layer is formed on the silicon substrate, the N-type doped polysilicon film is formed on the tunnel oxide layer by PECVD and has a thickness between 30 nm and 100 nm, the cover layer is formed on the N-type doped polysilicon film. The N-type doped polysilicon film formed by PECVD allows the tunnel oxide layer to retain fine passivation ability so as to enhance conversion efficiency of the passivated contact solar cell.
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