SURFACE ACOUSTIC WAVE DEVICE

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United States of America Patent

APP PUB NO 20230071292A1
SERIAL NO

17903757

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Abstract

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A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF YAMANASHI4-37 TAKEDA 4-CHOME KOFU-SHI YAMANASHI 4008510 ?4008510
PIEZO STUDIO INC4-1 ICHIBANCHO 1-CHOME AOBA-KU SENDAI-SHI MIYAGI 980-8579

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KAKIO, Shoji Yamanashi, JP 10 36
KIMURA, Noritoshi Miyagi, JP 17 69

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